Easing the transition to LED backlit LCD, the Smart Bridge module uses a system’s existing input power signals and converts the analog dimming signal used for the inverter into a PWM signal for an LED ...
Texas Instruments has developed a complete power stage comprising a driver and two GaN FETs into a half-bridge configuration. The power stage is housed in a QFN package and is optimized for ...
The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
Cree, Inc. released the industry's first all-SiC 1.7kV power module in an industry standard 62mm housing. Dec. 2, 2014 Cree, Inc. released the industry's first all-SiC 1.7 kV power module in an ...
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