Abstract: I welcome you to the fourth issue of the IEEE Communications Surveys and Tutorials in 2021. This issue includes 23 papers covering different aspects of communication networks. In particular, ...
Abstract: We investigated the formation mechanism of a rounded silicon-germanium (SiGe)-etch front (rounding) in gate-all-around field-effect transistor (GAA-FET) manufacturing. This rounding is ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback